
Harold QCSE
EAM with Quantum-Confined Stark Effect model
Electro-Absorption Modulator with QCSE model
The Harold QCSE module will allow you to model Electro-Absorption Modulators (EAM) and Electro-Refractive Modulators, calculating the absorption spectrum and refractive index spectrum of your device for any range of reverse bias values. Plotting the evolution of absorption and refractive index spectra as a function of bias will allow you to fully characterise how light gets modulated when it travels through the electro-absorption modulator.
The model includes a full physical description of the Quantum-Confined Stark Effect (QCSE). You can find a validation with experimental results here for a AlGaAs electro-absorption modulator and a SiGe electro-absorption modulator.
In terms of interface Harold QCSE is fully integrated with Harold and the epitaxial structure and QWs are defined using Harold’s layers editor.
The EAM model
Unlike other electro-absorption modulator models, Harold QCSE is a rigorous first-principle physical model which relies on a rigorous modelling of the physics at a fundamental level.
The EAM model consists of four solvers that are run in sequence:
- Poisson-Drift-Diffusion Solver
- Schrödinger Solver
- Exciton Electrical
- Permittivity Solver
Harold QCSE allows you to follow and control each step of the complex solution. In a multi-stage model like this, it is sometimes difficult to track the origin of problems. In Harold QCSE, the user can inspect the results of the intermediate solvers, obtain physical insight into specific trends of the device’s behaviour and spot problems at early stages.
Simulations Results
Poisson-Drift-Diffusion Solver
For a defined range of reverse biases, Harold QCSE can produce the following physical values as functions of vertical position
- conduction and valence band edges of the structure
- quasi-Fermi levels
- carrier and charge densities



Schrödinger Solver
The Schrödinger Solver of Harold QCSE can produce
- electron and hole wavefunctions and their energy levels in the QW structure
- number of electron-hole pairs with an overlap integral above a defined cutoff value
This tool allows the user to observe the Quantum-Confined Stark Effect (QCSE) in a specific QW structure as a function of reverse bias.
Absorption and refractive index spectra
The final results, the absorption and index spectra, are produced for TE and TM polarizations and can be plotted in different units:
- wavelength or photon energy in the x-axis
- absorption, real and imaginary parts of refractive index or electrical permittivity



The user can chose the temperature, the bias and spectrum range.
Validation: against AlGaAs and SiGe modulators
We used Harold QCSE to model a AlGaAs electro-absorption modulator and a SiGe electro-absorption modulator. The results are shown below alongside published experimental data; as you can see the simulations are in good agreement with the experiments, with all main features reproduced. We expect that the differences in absolute absorption coefficients are due to scaling ambiguities in the experimental papers.
![AlGaAs modulator: absorption spectra for various values of the bias voltage (left) Experimental data from [1] and (right) Harold QCSE results for (top) TE polarisation and (bottom) TM polarisation](/assets/images/transforms/harold/eam/_580xAUTO_fit_center-center_none/2697/algaas_validation.webp?v=1744392300)
![SiGe modulator: absorption spectra for various values of the bias voltage (left) Experimental data from [2] and (right) Harold QCSE results for TE polarisation](/assets/images/transforms/harold/eam/_580xAUTO_fit_center-center_none/2706/sige_validation.webp?v=1744392300)
References
[1] S.-L. Chuang, S. Schmitt-Rink, D. A. B. Miller and D. S. Chemla, “Exciton Green’s function approach to optical absorption in a quantum well with an applied electric field”, Phys. Rev. B, 43, 2, pp. 1500-1509 (1991)
[2] Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, and J. S. Harris, “Quantum-confined stark effect in Ge–SiGe quantum wells on Si for optical modulators”, IEEE J. Sel. Topics Quantum Electron., 12, pp. 1503–1513 (2006)